Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments

V.V. Andreeva, G.G. Bondarenkob, V.M. Maslovskyc and A.A. Stolyarova aBauman Moscow State Technical University, Kaluga Branch, 2, Bazhenov Str., Kaluga, 248600, Russia bNational Research University Higher School of Economics, 20, Myasnitskaya Ulitsa, Moscow 101000, Russia cThe State Unitary Enterprise of a City of Moscow Research-and-Production Centre "SPURT", Zelenograd, 4, West of the 1st proezd, 124460, Russia

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The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric SiO2-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the SiO2 film and Si-SiO2 interface.

DOI: 10.12693/APhysPolA.125.1371 PACS numbers: 73.40.Qv, 73.40.Gk