Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface

N.V. Frantskevicha, A.K. Fedotovb, A.V. Frantskevicha and N.V. Mazanikc aBelarusian National Technical University, Minsk, 220063, Belarus bBelarusian State University, Minsk, 220030, Belarus cBelarusian State Technological University, Minsk, 220006, Belarus

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The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 cm-1 corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 cm-1 and simultaneous disappearance of 4158 cm-1 line. No such effect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 cm-1, which can be associated with molecular hydrogen.

DOI: 10.12693/APhysPolA.125.1332 PACS numbers: 78.30.Am, 61.72.uf