Nanostructure Formation during Amorphous Carbon Films Deposition

Z. Rutkuniene, L. Vigricaite and A. Grigonis Kaunas University of Technology, Physics Department, Studentu 50, LT 51368, Kaunas, Lithuania

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Influence of Cu particles for the carbon nanostructures formation during a-C:H films deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by Ar+ ions for the Cu particles deposition on the silicon before a-C:H films formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the first stage of carbon film deposition. Structure of a:C-H films and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the film, then deposition time was 300 s.

DOI: 10.12693/APhysPolA.125.1303 PACS numbers: 81.05.uj, 81.15.-z, 78.20.-e, 82.80.Gk