Characterisation of (100) GaSb Passivated Surface Using Next Generation 3D Digital Microscopy
E. Papis-Polakowskaa, E. Leonhardtb and J. Kaniewskia
aInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
bHIROX EUROPE, Jyfel, 9 rue des Gantries, F-69130 Ecully, France
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(100) GaSb surface was modified by self-assembled superficial layer of organic molecules by wet chemical process. Hexadecanethiol (HDT) was the choice as modifier. The treated GaSb surface, whose quality affects the morphology of the resulting modified GaSb, was investigated by 3D digital microscopy. The structural study were carried out quickly, non-destructively and comprehensively with using the next generation 3D HIROX KH-8700 Digital Microscope.

DOI: 10.12693/APhysPolA.125.1052
PACS numbers: 07.60.Pb, 64.75.Yz, 81.65.Rv