Defect Analysis of Pentacene Diode
L. Stuchlíková, M. Weis *, P. Juhász, A. Kósa, L. Harmatha and J. Jakabovic
Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
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This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × 10-18 cm2 at 0.34 eV, 3.1 × 10-17 cm2 at 0.41 eV, and 2.9 × 10-15 cm2 at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.

DOI: 10.12693/APhysPolA.125.1038
PACS numbers: 72.80.Le, 73.50.Gr, 71.55.-i