Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer
H. Matsuuraa, T. Morinea and S. Nagamachib
aOsaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
bNagamachi Science Laboratory Co., Ltd., 1-16-1-1003 Shioe, Amagasaki, Hyogo 661-0976, Japan
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Because Al and B (elements of group III) in SiC are acceptors with deep energy levels and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (an element of group II) that may emit two holes into the valence band is investigated. Annealing at 1800°C makes a Mg-implanted layer p-type. It is found that an Mg acceptor level in 4H-SiC is too deep to reliably determine the density and energy level of the Mg acceptor using the frequently used occupation probability, i.e., the Fermi-Dirac distribution function. Using the distribution function that accounts for the influence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be determined to be approximately 1 × 1019 cm-3 and 0.6 eV, respectively. These values are considered to be reliable because they agree well with the Mg implantation condition.

DOI: 10.12693/APhysPolA.125.1017
PACS numbers: 71.55.-i, 73.61.Le