Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers
G. Katoa,b, M. Tajimaa,b, F. Okayamaa,b, S. Tokumaruc, R. Satod, H. Toyotaa and A. Ogurab
aInstitute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
bMeiji University, Kawasaki 214-8571, Japan
cNippon Steel & Sumitomo Metal Corporation, Futtsu 293-8511, Japan
dNippon Steel & Sumikin Technology Co., Ltd, Futtsu 293-8511, Japan
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We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of 16O¯. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.

DOI: 10.12693/APhysPolA.125.1010
PACS numbers: 78.55.Ap, 61.72.Qq, 82.80.Rt, 88.40.jj