Effect of Stress on Defect Transformation in B+ and Ag+ Implanted HgCdTe/CdZnTe Structures
R.K. Savkinaa, A.B. Smirnova, A.I. Gudymenkoa, V.P. Kladkoa, F.F. Sizova and C. Frigerib
aV. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine
bCNR-IMEM Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy
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The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) Hg1-xCdxTe (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B+ and Ag+) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × 103 Pa and 2.2 × 105 Pa, respectively). The structural properties of the Hg1-xCdxTe epilayers were investigated using X-ray high-resolution reciprocal space mapping.

DOI: 10.12693/APhysPolA.125.1003
PACS numbers: 61.72.uj, 81.16.Rf