ACTA

Effect of Stress on Defect Transformation in B⁺ and Ag⁺ Implanted HgCdTe/CdZnTe Structures

R.K. Savkina^a, A.B. Smirnov^a, A.I. Gudymenko^a, V.P. Kladko^a, F.F. Sizov^a and C. Frigeri^b
^aV. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine
^bCNR-IMEM Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy

Full Text PDF

The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) Hg_1-xCd_xTe (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B⁺ and Ag⁺) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × 10³ Pa and 2.2 × 10⁵ Pa, respectively). The structural properties of the Hg_1-xCd_xTe epilayers were investigated using X-ray high-resolution reciprocal space mapping.

DOI: 10.12693/APhysPolA.125.1003
PACS numbers: 61.72.uj, 81.16.Rf