Kelvin Force Microscopy Characterization of Corona Charged Dielectric Surfaces
D. Marinskiy a, P. Edelman a and A.D. Snider b
aSemilab SDI, 10770N. 46th St., Ste E700, Tampa, FL, USA
bUniversity of South Florida, 4202 East Fowler Avenue, Tampa FL, USA
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Ionic diffusion of (H2O)n+ and CO3- on SiO2 surfaces has been quantified using Kelvin force microscopy measurement of ion distribution change after small spot corona charge. For both positive and negative ionic species, the concentration profiles versus time follow the two-dimensional surface diffusion enabling a determination of corresponding diffusion coefficients. On a thermally grown SiO2 surface, diffusion coefficients of (H2O)n+ and CO3- ions were 2.2 × 10-11 cm2/s and 4.8 × 10-12 cm2/s, respectively. On a chemically cleaned SiO2 surface, diffusion coefficients of (H2O)n+ and CO3- ions were 7.5 × 10-9 cm2/s and 2.4 × 10-9 cm2/s, respectively. Mathematical analysis of the surface potential decay yields an additional parameter - capacitance equivalent thickness.

DOI: 10.12693/APhysPolA.125.997
PACS numbers: 77.55.-g, 73.61.-r, 68.37.Ps, 73.25.+i