Kelvin Force Microscopy Characterization of Corona Charged Dielectric Surfaces |

D. Marinskiy
^{ a}, P. Edelman^{ a} and A.D. Snider^{ b}^{a}Semilab SDI, 10770N. 46th St., Ste E700, Tampa, FL, USA
^{b}University of South Florida, 4202 East Fowler Avenue, Tampa FL, USA |

Full Text PDF |

Ionic diffusion of (H_{2}O)_{n}^{+} and CO_{3}^{-} on SiO_{2} surfaces has been quantified using Kelvin force microscopy measurement of ion distribution change after small spot corona charge. For both positive and negative ionic species, the concentration profiles versus time follow the two-dimensional surface diffusion enabling a determination of corresponding diffusion coefficients. On a thermally grown SiO_{2} surface, diffusion coefficients of (H_{2}O)_{n}^{+} and CO_{3}^{-} ions were 2.2 × 10^{-11} cm^{2}/s and 4.8 × 10^{-12} cm^{2}/s, respectively. On a chemically cleaned SiO_{2} surface, diffusion coefficients of (H_{2}O)_{n}^{+} and CO_{3}^{-} ions were 7.5 × 10^{-9} cm^{2}/s and 2.4 × 10^{-9} cm^{2}/s, respectively. Mathematical analysis of the surface potential decay yields an additional parameter - capacitance equivalent thickness. |

DOI: 10.12693/APhysPolA.125.997 PACS numbers: 77.55.-g, 73.61.-r, 68.37.Ps, 73.25.+i |