X-Ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-Irradiated Precision Polished Substrate

Y. Kato, H. Umezawa and S.I. Shikata Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan

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Suitable techniques for the growth of high-quality single-crystal diamond are needed in order to use single-crystal diamond in power devices. Because the ion plantation technique cannot be used for diamond doping, a drift layer and a conduction layer for a diamond power device were grown by chemical vapor deposition. An important challenge in this field is to reduce the dislocation density in the epitaxial layer. The dislocation density was found to increase during the chemical vapor deposition process. Because a defective surface is one cause of increased dislocation density, the use of a UV-polished substrate having no scratches due to mechanical polishing was investigated.

DOI: 10.12693/APhysPolA.125.969 PACS numbers: 61.72.-y, 81.05.ug