Observations of Overlapped Single Shockley Stacking Faults in 4H-SiC PiN Diode
K. Nakayamaa, T. Hemmia, K. Asanoa, T. Miyazawab and H. Tsuchidab
aPower Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan
bMaterials Science Research Laboratory, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
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In 4H-SiC PiN diodes, Shockley-type stacking faults expand from basal plane dislocations under conducting forward current. We report for the first time overlapped single Shockley-type stacking faults in a 4H-SiC PiN diode after forward conduction. In photoluminescence measurements, we observed not only an emission peak at 425 nm, which corresponds to the single Shockley-type stacking fault, but also one at 432 nm. In cross-sectional cathode luminescence images, emission lines at 425 nm and 432 nm merge and become straight. Transmission electron microscope images showed that the structure at the position with the 432 nm emission overlapped the single Shockley-type stacking faults.

DOI: 10.12693/APhysPolA.125.962
PACS numbers: 81.05.Hd