ACTA

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

B. Kucur^a, M. Ahmetoglu^a, I.A. Andreev^b, E.V. Kunitsyna^b, M.P. Mikhailova^b and Y.P. Yakovlev^b
^aDepartment of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
^bIoffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

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GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.

DOI: 10.12693/APhysPolA.125.411
PACS numbers: 73.40.-c, 78.66.-w, 85.60.Dw