Effects of RF Power on Electrical and Structural Properties of Sputtered SnO2:Sb Thin Films |
| O. Cevher, M.O. Guler, U. Tocoglu, T. Cetinkaya, H. Akbulut and S.C. Okumus
Sakarya University, Engineering Faculty, Department of Metallurgical and Material Engineering, Esentepe Campus, Sakarya, Turkey |
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| In this work, antimony doped tin oxide (SnO2:Sb) thin films were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The SnO2:Sb thin films were deposited for 1.0 h in a mixture of Ar and O2 environment with O2/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of SnO2:Sb thin films was assessed using a field emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The average surface roughness (Ra) was measured with atomic force microscopy. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thicknesses of the films were measured by surface profiler. |
DOI: 10.12693/APhysPolA.125.293 PACS numbers: 68.55.-a, 68.55.ag, 81.15.Cd |