Magnetism and Specific Heat of TmRhX (X = Ga, Ge) Compounds
S. Barana, J. Przewoźnikb and A. Szytułaa
aM. Smoluchowski Institute of Physics, Jagiellonian University, W.S. Reymonta 4, 30-059 Kraków, Poland
bAGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Kraków, Poland
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Magnetic and specific heat data of the TmRhX (X = Ga, Ge) compounds are reported. These compounds crystallize in an orthorhombic crystal structure of the TiNiSi-type (space group Pnma). Magnetic data indicate that the compounds are antiferromagnets with the Néel temperature TN equal to 3.9 K for TmRhGa and 6.0 K for TmRhGe. Magnetic susceptibility of TmRhGe has an additional peak at Tt = 10.6 K. In TmRhGe temperature dependence of χ"(T), the positions of both the peaks at TN and Tt change with frequency indicating a relaxation process. These data suggest that with the decreasing temperature, first a cluster glass state and next the long-range aniferromagnetic order exists.

DOI: 10.12693/APhysPolA.124.998
PACS numbers: 75.30.-m, 75.30.kz, 75.40.Cx, 75.47.Np