Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films |
| D.V. Myroniuka, G.V. Lashkareva, I.I. Shtepliuka, V.Y. Lazorenkoa, V.T. Maslyukb, I.I. Timofeevaa, A.S. Romaniukc, V.V. Strelchukc, O.F. Kolomysc and V.V. Khomyakd
aFrantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanivsky Str., 03680 Kyiv, Ukraine bInstitute of Electron Physics, NAS of Ukraine, 21 Universitetska Str., 88017 Uzhgorod, Ukraine cLashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine dFedkovich Chernivtsi National University, 2 Kotsubinsky Str., 58012 Chernivtsi, Ukraine |
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| Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 1016 and 2 × 1016 cm-2. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band. |
DOI: 10.12693/APhysPolA.124.891 PACS numbers: 61.80.-x, 78.55.Et, 71.55.Gs |