Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications |
| L. Wachnickia, S. Gieraltowskaa, B.S. Witkowskia, S. Figgeb, D. Hommelb, E. Guziewicza and M. Godlewskia, c
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland bUniversity of Bremen Institute of Solid State Physics Semiconductor Epitaxy, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany cCardinal Stefan Wyszyński University, College of Science, Department of Mathematics and Natural Sciences, Warszawa, Poland |
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| An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors. |
DOI: 10.12693/APhysPolA.124.869 PACS numbers: 85.30.Kk, 61.05.cp, 81.05.Dz |