Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
L. Wachnickia, S. Gieraltowskaa, B.S. Witkowskia, S. Figgeb, D. Hommelb, E. Guziewicza and M. Godlewskia, c
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
bUniversity of Bremen Institute of Solid State Physics Semiconductor Epitaxy, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany
cCardinal Stefan Wyszyński University, College of Science, Department of Mathematics and Natural Sciences, Warszawa, Poland
Full Text PDF
An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.

DOI: 10.12693/APhysPolA.124.869
PACS numbers: 85.30.Kk, 61.05.cp, 81.05.Dz