ACTA

X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films

A. Ievtushenko^a, O. Khyzhun^a, I. Shtepliuk^a, V. Tkach^b, V. Lazorenko^a and G. Lashkarev^a
^aI. Frantsevich Institute for Problems of Material Science, National Academy of Science of Ukraine, Kyiv, Ukraine
^bV. Bakul Institute for Superhard Materials, National Academy of Science of Ukraine, Kyiv, Ukraine

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Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.

DOI: 10.12693/APhysPolA.124.858
PACS numbers: 79.60.-i, 77.55.hf, 68.55.Ln