X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
A. Ievtushenkoa, O. Khyzhuna, I. Shtepliuka, V. Tkachb, V. Lazorenkoa and G. Lashkareva
aI. Frantsevich Institute for Problems of Material Science, National Academy of Science of Ukraine, Kyiv, Ukraine
bV. Bakul Institute for Superhard Materials, National Academy of Science of Ukraine, Kyiv, Ukraine
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Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.

DOI: 10.12693/APhysPolA.124.858
PACS numbers: 79.60.-i, 77.55.hf, 68.55.Ln