Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
J. Kaczmarskia, A. Taubea, b, E. Dynowskaa, c, J. Dyczewskic, M. Ekielskia, E. Kamińskaa and A. Piotrowskaa
aInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
bInstitute of Microelectronics and Optoelectronics, WUT, Koszykowa 75, 00-662 Warsaw, Poland
cInstitute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
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In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm2/(Vs) has been demonstrated.

DOI: 10.12693/APhysPolA.124.855
PACS numbers: 81.05.Gc, 81.15.Cd, 85.30.Tv, 72.80.Ng, 73.61.Jc