ACTA

CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study

M. Tokarczyk^a, G. Kowalski^a, K. Grodecki^{a, b}, J. Urban^a and W. Strupiński^b
^aInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
^bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as d₀₀₂ interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.

DOI: 10.12693/APhysPolA.124.768
PACS numbers: 61.48.Gh, 61.72.Dd, 63.22.Rc