ACTA

Study of Terahertz Emission from Surfaces of Cu(InGa)Se₂ Layers

A. Koroliov^a, A. Arlauskas^{a, b}, S. Balakauskas^a, M. Šoliūnas^a, A. Maneikis^a, A. Krotkus^{a, b}, A. Šetkus^a and V. Tamošiūnas^{a, b}
^aCenter for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
^bFaculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania

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In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se₂ layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se₂ layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se₂ and n-type ZnO layers.

DOI: 10.12693/APhysPolA.124.846
PACS numbers: 78.66.Li, 88.40.jn, 77.55.hf