Study of Terahertz Emission from Surfaces of Cu(InGa)Se2 Layers
A. Koroliova, A. Arlauskasa, b, S. Balakauskasa, M. Šoliūnasa, A. Maneikisa, A. Krotkusa, b, A. Šetkusa and V. Tamošiūnasa, b
aCenter for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
bFaculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania
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In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se2 layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se2 and n-type ZnO layers.

DOI: 10.12693/APhysPolA.124.846
PACS numbers: 78.66.Li, 88.40.jn, 77.55.hf