Quantum Effects in Electrical Conductivity and Photoconductivity of Single SbSI Nanowire
K. Mistewicza, M. Nowaka, R. Wrzalikb, M. Jesioneka, P. Szperlicha, R. Paszkiewiczc and A. Guiseppi-Elied
aInstitute of Physics, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
bInstitute of Physics, University of Silesia, Bankowa 14, 40-007 Katowice, Poland
cDivision of Microelectronics and Nanotechnology, Wrocław University of Technology, Długa 65, 53-633 Wrocław, Poland
dCenter for Bioelectronics, Biosensors and Biochips, Clemson University, 132 Earle Hall, Clemson, USA
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For the first time current quantization is reported for antimony sulfoiodide (SbSI) nanowires. It has been registered in current responses on electric field switching as well as on illumination on and off. Current steps determined in all experiments have been equal to each other within the experimental error. It has been explained by the quantized change of free carrier concentration in nanowire. Lateral dimensions of SbSI nanowires estimated from quantum steps are comparable with geometrical data reported for the same technology of material preparation.

DOI: 10.12693/APhysPolA.124.827
PACS numbers: 81.07.Vb, 81.07.Bc, 73.63.Bd