Effect of Confinement Anisotropy on Excitonic Properties in InAs/InP Quantum Dashes
P. Mrowińskia, A. Musiała, G. Sęka, J. Misiewicza, S. Höflingb, A. Somersb, S. Heinb and A. Forchelb
aInstitute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
bTechnische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems (RCCM), Am Hubland, D-97074 Würzburg, Germany
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The influence of confinement potential anisotropy on emission properties of strongly elongated single InAs/InGaAlAs/InP quantum dashes has been investigated by polarization-resolved microphotoluminescence spectroscopy at around 1.5 μm. There have been determined the exciton fine structure splitting, degree of linear polarization of surface emission and biexciton binding energy. The investigated dashes exhibited usually: the exciton anisotropy splitting larger than 100 μeV, the corresponding biexciton binding energy of about 3 meV, and the degree of linear polarization values in the range from 24% to 55%. Here, we presented a correlation of these parameters for several quantum dashes, which can be attributed either to a change in lateral aspect ratio within the ensemble, or the carrier localization on random fluctuations of the dash confinement potential.

DOI: 10.12693/APhysPolA.124.801
PACS numbers: 71.35.-y, 71.70.Gm, 78.67.Hc, 73.21.-b, 81.07.Ta