Quantum Model for Metal-Insulator Transition in Amorphous GdxSi1-x
A. Paja and M. Ornat
AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland
Received: February 6, 2013; In final form: July 4, 2013
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The model for experimentally observed metal-insulator transition induced by magnetic field in amorphous GdxSi1-x is presented. The method of calculation is based on the previously created model for amorphous alloys now developed to include magnetic field effects. The model is based on the quantum "2 kF" scattering model theory where the pseudopotentials are replaced by the scattering matrix operators and the Fermi energy is properly determined by the accurate values of the phase shifts. The results agree very well with experimental data.

DOI: 10.12693/APhysPolA.124.717
PACS numbers: 72.15.Cz, 72.15.Lh, 72.15.Rn