Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

T. Taishi a, I. Yonenaga b and K. Hoshikawa a a Faculty of Engineering, Shinshu University, Wakasato, Nagano 380-8553, Japan b Institute for Materials Research, Tohoku University, Katahira, Aoba-ku, Sendai, 980-8557, Japan

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In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very difficult because of the segregation coefficient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B2O3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.

DOI: 10.12693/APhysPolA.124.231 PACS numbers: 81.10.Fq, 61.72.Ff, 61.72.uf