X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

M. Lefeld-Sosnowskaa and A. Malinowskab a Institute of Experimental Physics, University of Warsaw, Hoża 69, PL 00-681 Warsaw, Poland b Institute of Electronic Materials Technology, Wólczyńska 133, PL01-919 Warsaw, Poland

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X-ray diffraction topography is one of basic diagnostics tools serving for visualisation of single crystal lattice defects. Defects of various kinds can be observed. The present study is a review of topographic results obtained in the X-ray laboratory of the Institute of Experimental Physics, University of Warsaw, for three families of single crystals grown by the Czochralski method: (i) silicon (Si) and Si1-xGex, (ii) selected binary REVO4 oxides and (iii) selected ternary ABCO4 oxides. The effect of chemical composition, growth conditions and post growth thermal annealing on the defect appearing in crystals is discussed. Various defects are revealed: the growth dislocations (some early Si crystals), the composition-gradient-induced lattice deformation (Si1-xGex, solid solutions CaxSr1-xNdAlO4), defects generated in Si after the post growth thermal processes, oriented elongated rod-like macro-defects tending to form: networks within the crystal core, cellular structure in the outer shell (SrLaGaO4), and variously developed block structure (in selected binary REVO4 crystals).

DOI: 10.12693/APhysPolA.124.360 PACS numbers: 61.72.Ff