Czochralski Growth and Optical Properties of (LuxGd1-x)2SiO5 Solid Solution Crystals Single Doped with Sm3+ and Dy3+ |
| W. Ryba-Romanowski a, A. Strzęp a, M. Głowacki b, R. Lisiecki a, P. Solarz a and J.Z. Domagala b
a Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wrocław, Poland b Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland |
| Full Text PDF |
| Solid solution crystals (LuxGd1-x)2SiO5 single doped with Sm3+ and Dy3+ were grown by the Czochralski method. Segregation coefficients Lu/Gd, melting temperatures and structures of solid solution crystals were determined for 0.15 ≤ x ≤ 0.8. It was found that for x ≥ 0.17 the crystals belong to the monoclinic system within a space group C2/c and their melting temperature diminishes monotonously from 1990°C to 1780°C when x decreases from 0.8 to 0.15. Disparity of ionic radii of Lu3+ and Gd3+ induces structural disorder that brings about an inhomogeneous broadening of spectral lines in absorption and emission spectra of incorporated luminescent Sm3+ and Dy3+ ions. Optical properties of obtained crystals were determined based on results of measurement of absorption and emission spectra and luminescence decay curves. Spectroscopic investigation revealed that Sm3+ doped crystals show intense emission distributed in the visible-near infrared region with the most intense band centred at 605 nm and characterized by a branching ratio of 0.43. Emission spectrum of Dy3+ doped crystals is dominated by a band centred at 575 nm and characterized by a branching ratio of 0.58. It has been concluded that the systems under study are potential laser materials able to generate visible emission upon GaN/-InGaN laser diode pumping. |
DOI: 10.12693/APhysPolA.124.321 PACS numbers: 42.55.Rz, 42.70.Hj, 78.40.-q, 78.55.Fv |