High-Pressure Treatment up to 25 GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects |
| V.V. Shchennikov a, Vs.V. Shchennikov b, I.V. Korobeynikov a and N.V. Morozova a
a Institute of Metal Physics of Russian Academy of Sciences, Urals Division, 18 S. Kovalevskaya Str.,Yekaterinburg 620990, Russia b Institute of Engineering Sciences of Russian Academy of Sciences, Urals Division, 34 Komsomolskaya Str., Yekaterinburg 620219, Russia |
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| The thermoelectric properties of a set of single crystalline Si wafers with different oxygen concentration grown by the Czochralski technique have been studied at ultrahigh pressures up to 25 GPa. The dependence of semiconductor-metal transition pressure at Czochralski grown Si on the concentration cO of the interstitial oxygen was found to present a convex curve with the maximum near cO ≈ 9 × 1017 cm-3. The high pressure thermoelectric power method seems to be suitable for characterization of impurity-defect structure of Si wafers. For Si1 - xGex crystals (1% < x < 3%) the strong changes of both the value and the sign of thermoelectric power have been observed at pressures much less than ones of Si-I → Si-II transition. From nanoindentation data the phase transition Si-I → Si-II, corresponding to semiconductor-metal electronic transformation has been detected at the loading up to ≈ 10 mN. These findings suggest a way for creation of integrated circuits, in which zones with different types of conductivity and hence different p-n, p-n-p etc. structures may be "written" by applied stress at nanoscale level, and the control on the value of the above stresses now is possible by the proposed nanoindentation technique. |
DOI: 10.12693/APhysPolA.124.244 PACS numbers: 61.72.uf, 81.40.Vw, 72.20.Pa, 62.50.-p, 05.70.Fh |