Magnetization Studies of Antiferromagnetic Interlayer Coupling in EuS-SrS Semiconductor Multilayers |
| T.A. Samburskayaa, A.Yu. Sipatova, V.V. Volobueva, P. Dziawab, W. Knoffb, L. Kowalczykb, M. Szotb and T. Storyb
aNational Technical University "Kharkov Polytechnic Institute", 21 Frunze Str., 61002 Kharkov, Ukraine bInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland |
| Received: March 27, 2013; in final form: April 12, 2013 |
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| Temperature and magnetic field dependence of magnetization of EuS-SrS multilayers grown epitaxially on KCl (001) substrate is experimentally studied by superconducting magnetometry technique. In these lattice-matched semiconductor heterostructures EuS layers are ferromagnetic quantum wells whereas SrS layers are nonmagnetic spacer barriers. The multilayers composed of EuS layers with thickness 3.5-5 nm and SrS layers (thickness 0.5-10 nm) exhibit ferromagnetic transition at 17 K. In the multilayers with ultrathin SrS spacers (0.5-1 nm) a nonmonotonic temperature dependence of magnetization as well as a characteristic switching in magnetic hysteresis loops is observed. These experimental findings are explained considering antiferromagnetic interlayer coupling between ferromagnetic EuS layers via nonmagnetic SrS spacers. The strength of this coupling is determined based on model magnetization calculations. |
DOI: 10.12693/APhysPolA.124.133 PACS numbers: 75.20.Ck, 75.30.Et |