Chemical Composition of Native Oxide Layers on In+ Implanted and Thermally Annealed GaAs
M. Kulika, D. Kołodyńskab, J. Żuka, F.F. Komarovc and J. Filiksa
aInstitute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
bDepartment of Inorganic Chemistry, Faculty of Chemistry, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 2, 20-031 Lublin, Poland
cInstitute of Applied Physics Problems, Belarussian State University, Minsk, Belarus
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Semi-insulating GaAs wafers have been implanted with 250 keV In+ ions at a fluence of 3 × 1016 cm-2. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction O16 (α, α)O16 method. The chemical composition of native oxide layers on In+ implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. As2O3, As2O5, Ga2O3, GaAs, InAs and InAsO4 compounds were detected in these layers.

DOI: 10.12693/APhysPolA.123.943
PACS numbers: 61.72.uj, 79.60.-i, 82.80.Yc