III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing |
| S. Prucnala,b, M. Turek a, K. Gao b, S. Zhou b, K. Pyszniak a, A. Droździel a, J. Żuk a and W. Skorupa b
aMaria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland bInstitute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany |
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| Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in SiO2 and Si3N4 made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches. |
DOI: 10.12693/APhysPolA.123.935 PACS numbers: 78.30.Fs, 78.67.Hc, 81.05.Ea, 81.07.Ta, 81.15.Lm |