Current-Voltage Characteristic Features of Diodes Irradiated with 170 MeV Xenon Ions |
N.A. Poklonskia, N.I. Gorbachuka, Vo Quang Nhaa, M.I. Tarasika, S.V. Shpakovskib, V.A. Filipeniab, V.A. Skuratovc, A. Wieckd and T.N. Kołtunowicze
aBelarusian State University, 4 Nezavisimosti Ave., BY-220030, Minsk, Belarus bJSK Integral, 12 Korzhenevskogo St., BY-220108 Minsk, Belarus cJoint Institute for Nuclear Research, 6 Joliot-Curie, RU-141980 Dubna, Russia dRuhr-Universitaet Bochum, 150 Universitaetsstr, D-44780 Bochum, Germany eLublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland |
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Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the p+-region (implantation energy 170 MeV, fluence Φp from 5 × 107 to 109 cm-2). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes. |
DOI: 10.12693/APhysPolA.123.926 PACS numbers: 72.20.Jv, 61.80.Fe |