Current-Voltage Characteristic Features of Diodes Irradiated with 170 MeV Xenon Ions
N.A. Poklonskia, N.I. Gorbachuka, Vo Quang Nhaa, M.I. Tarasika, S.V. Shpakovskib, V.A. Filipeniab, V.A. Skuratovc, A. Wieckd and T.N. Kołtunowicze
aBelarusian State University, 4 Nezavisimosti Ave., BY-220030, Minsk, Belarus
bJSK Integral, 12 Korzhenevskogo St., BY-220108 Minsk, Belarus
cJoint Institute for Nuclear Research, 6 Joliot-Curie, RU-141980 Dubna, Russia
dRuhr-Universitaet Bochum, 150 Universitaetsstr, D-44780 Bochum, Germany
eLublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland
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Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the p+-region (implantation energy 170 MeV, fluence Φp from 5 × 107 to 109 cm-2). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.

DOI: 10.12693/APhysPolA.123.926
PACS numbers: 72.20.Jv, 61.80.Fe