Effect of Temperature on the Ion Beam Induced Luminescence of Oxide Powders Doped with Rare Earth Elements |
| G. Gawlika, G. Panczer b, N. Moncoffre c and J. Jagielski a
aInstitute of Electronic Materials Technology (ITME), Wólczyńska 133, 01-919 Warszawa, Poland bLaboratoire de Physico-Chimie des Matériaux Luminescents UMR 5620 CNRS, Lyon 1 University, Lyon, France cInstitut de Physique Nucléaire, Lyon, France |
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| The hydrogen ion beam induced luminescence of gadolinium oxide Gd2O3 doped with 1% of holmium (Ho) and 1% of bismuth (Bi) was investigated. Degradation of the holmium related 549 nm ion beam induced luminescence line intensity during hydrogen ion irradiation was observed. Two different mechanisms of the ion beam induced luminescence degradation has been proposed: the first one related to the accumulation of ion induced target material damage and the second mechanism related to the target temperature growth during ion beam bombardment. The experimental method for separation of both mechanisms effects was proposed and demonstrated. |
DOI: 10.12693/APhysPolA.123.920 PACS numbers: 78.60.Hk |