Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions
A.F. Komarova, O.I. Velichkob, G.M. Zayatsc, F.F. Komarova, S.A. Miskiewicza, A.M. Mironova and Yu.V. Makarevicha
aInstitute of Applied Physics Problems, 7 Kurchatov St., 220108 Minsk, Belarus
bBelarussian State University of Informatics and Radioelectronics, 6 Brovki St., 220113 Minsk, Belarus
cInstitute of Mathematics, Academy of Sciences of Belarus, 11 Surganov St., 220072 Minsk, Belarus
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Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform: defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.

DOI: 10.12693/APhysPolA.123.804
PACS numbers: 66.30.J-, 07.05.Tp, 07.05.Bx