Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation

V. Vinciūnaitėa, A. Grigonisa, A. Medvidb and R. Zabelsc aKaunas University of Technology, Studentų St. 50, LT-51368 Kaunas, Lithuania bRiga Technical University, 14 Azenes Str., LV-1068 Riga, Latvia cInstitute of Solid State Physics, University of Latvia, 8 Kengaraga St., LV-1063 Riga, Latvia

Full Text PDF

Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene-hydrogen gas mixtures. The films were irradiated with a nanosecond Nd:YAG laser working at the first harmonics (λ1=1064 nm), the fourth harmonics (λ4=266 nm) or with a Nd:YVO4 laser working at the third harmonic (λ3=355 nm). The films were studied by the Raman scattering, micro-Fourier transform: infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ1=1064 nm leads to graphitization and formation of the silicon carbide, because of the silicon substrate decomposition. The samples were strongly modified after the irradiation by λ3=355 nm - the thickness of the films decreased, and silicon carbide was formed. It was observed that nano-structured materials (e.g. carbon nano-onions, nc-diamond) were formed after the irradiation by λ4=266 nm.

DOI: 10.12693/APhysPolA.123.874 PACS numbers: 79.20.Eb, 81.05.uj, 81.15.Jj, 82.80.Gk