Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties
V. Luhina, I. Zharskya and P. Zhukowskib
aBelarusian State University of Technology, Sverdlova 13a, 220050 Minsk, Republic of Belarus
bLublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland
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In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of In2O3 films formation with high selectivity and sensitivity to NO2, and NH3 are established.

DOI: 10.12693/APhysPolA.123.837
PACS numbers: 81.15.Cd, 73.50.-h