Correlation Between Refractive Index and Electronegativity Difference for ANB8-N Type Binary Semiconductors
A. Bahadura and M. Mishrab
aDepartment of Physics, Kamla Nehru Institute of Physical and Social Sciences, Sultanpur-228 118 (U.P.), India
bDepartment of Physics, Birla Institute of Technology and Science, Pilani-333 031 (Rajasthan), India
Received: January 10, 2012; in final form: December 8, 2012
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A simple correlation between the high-frequency refractive index and electronegativity difference has been established for large number of ANB8-N type binary semiconductors. The proposed relation has been applied satisfactorily to evaluate the refractive index of binary semiconductors belonging to groups I-VII, II-VI, III-V and IV-VI. The estimated values of refractive index from present relation are utilized to calculate the electronic polarizability of compounds by applying the Lorentz-Lorentz formula. Our calculated values of refractive index and electronic polarizability are in good agreement with the values evaluated by earlier researchers.

DOI: 10.12693/APhysPolA.123.737
PACS numbers: 78.20.Ci, 71.55.Eq