High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

K. Abedia and H. Afrouzb aDepartment of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, G.C. 1983963113, Tehran, Iran bDepartment of Engineering, Islamic Azad University, Ahar Branch, Iran

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In this paper, for the first time, a high performance hybrid silicon evanescent traveling wave electroabsorption modulator based on asymmetric intra-step-barrier coupled double strained quantum wells active layer is introduced which has double steps at III/V mesa structure. Through this active layer, hybrid silicon evanescent traveling wave electroabsorption modulator will be advantages such as very low insertion loss, zero chirp, high extinction ratio, and large Stark shift and better figures of merit as compared with multiquantum well and intra-step quantum well structures. Furthermore, traveling wave electroabsorption modulator with double steps III/V mesa structure results in a wider bandwidth as compared with one-step III/V mesa and mushroom structures. For the modulator with double steps III/V mesa structure with a 200 μm length, the 3 dB bandwidths are obtained as 132 and 52 GHz for 25 and 40 Ω characteristic impedances, respectively.

DOI: 10.12693/APhysPolA.123.415 PACS numbers: 85.35.Be