Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate

V.A. Kulbachinskii, R.A. Lunin, N.A. Yuzeeva, G.B. Galiev, I.S. Vasilievskii and E.A. Klimov Moscow State University (M.V. Lomonosov), Physics Faculty, Low Temperature Physics, and Superconductivity Department, Moscow, 119991 GSP-1, Russia

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Isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well In0.53Ga0.47As or by illumination using light with λ = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.

DOI: 10.12693/APhysPolA.123.345 PACS numbers: 72.10.-d, 73.21.Fg, 73.63.Hs