Fast Speed Semiconductor Ring Lasers Using Optical Injection Locking
M.I. Memona,b, H. Fathallaha and S. Yuc
aKACST Technology Innovation Center RFTONICS, King Saud University, Riyadh, Saudi Arabia
bCOMSATS Institute of Information Technology, Islamabad, Pakistan
cUniversity of Bristol, Bristol, United Kingdom
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Theoretical study for frequency response and modulation bandwidth of slave semiconductor ring laser in the master-slave configuration using optical injection locking has been investigated. Equations for frequency response of optical injection locking-semiconductor ring laser to the direct modulation, amplitude modulation of master laser, respectively, are derived and simulated. Enhancement in the modulation bandwidth of >100 GHz is reported between negative to positive detuning frequency and increasing injection power ratio.

DOI: 10.12693/APhysPolA.123.180
PACS numbers: 42.55.Px, 42.55.Sa, 42.60.By, 42.60.Fc, 42.65.Pc