Structural and Optical Characterization of GaN/AlGaN Single Quantum Disk Nanorods

M. Almokhtara, b, S. Emurab, H. Tambob, S. Hasegawab and H. Asahib aPhysics Department, Assiut University, Assiut 71516, Egypt bThe Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan

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GaN/AlGaN single quantum disks on GaN nanorods were grown on Si (001) substrate with native SiO2 layer by a plasma-assisted molecular-beam epitaxy under nitrogen-rich conditions. The transmission electron microscopy observations show single GaN nanorods images with an average thickness of 4 nm for the GaN single quantum disk and nanorod diameter of 15 nm. The observed photoluminescence spectra at 8 K show a peak at 3.475 eV, attributed to an exciton recombination in GaN. A strong peak was observed at 3.542 eV. This peak is attributed to the quantum confinement of excitons in the GaN quantum disks.

DOI: 10.12693/APhysPolA.123.473 PACS numbers: 61.46.Km, 78.67.De, 81.07.Vb