Characterization of TiAlV Films Prepared by Vacuum Arc Deposition: Effect of Substrate Temperature |
| B. Abdallaha, O. Mrad b and I.M. Ismail b
aAtomic Energy Commission, Department of Physics, P.O. Box 6091, Damascus, Syria bAtomic Energy Commission, Department of Chemistry, P.O. Box 6091, Damascus, Syria |
| Received: October 13, 2011; In final form: October 14, 2012 |
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| Three TiAlV films have been prepared by vacuum arc discharge technique at different substrate temperatures (50, 300, and 400°C). The depositions were carried out from aluminum, vanadium and titanium elemental targets. The temperature effects on the crystalline quality and texture have been investigated by means of X-ray diffraction. Two phases have been identified and the grain size has been found to increase with temperature. The composition of the films has been determined by proton induced X-ray emission technique. The Ti ratio was found to increase with temperature. The microhardness, measured by the Vickers indentation method was found to decrease with temperature. X-ray photoelectron spectroscopy was used to study the chemical composition of the passive layer formed on the films by analyzing high resolution spectra of Al 2p, Ti 2p and V 2p. This layer was mainly composed of TiO2 with a small participation of other oxidation and metallic states of Ti, Al and V. |
DOI: 10.12693/APhysPolA.123.76 PACS numbers: 68.55.-a, 87.85.jf |