The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots

M. Molasa, b, K. Gołasaa, M. Furmana, J. Lapointec, Z.R. Wasilewskic, M. Potemskib and A. Babińskia aInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland bLaboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 25, av. des Martyrs, 38042 Grenoble, France cInstitute for Microstructural Sciences, NRC Canada, Ottawa, Canada

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Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.

DOI: 10.12693/APhysPolA.122.991 PACS numbers: 78.55.Cr, 78.67.Hc