ACTA

Semiconducting Properties of Cu₅SbO₆

T. Groń^a, E. Filipek^b, G. Dąbrowska^b, H. Duda^a, S. Mazur^c, Z. Kukuła^a and S. Pawlus^a
^aInstitute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland
^bDepartment of Inorganic and Analytical Chemistry, West Pomeranian University of Technology, al. Piastów 42, 71-065 Szczecin, Poland
^cThe Henryk Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, E. Radzikowskiego 152, 31-342 Kraków, Poland

Full Text PDF

Thermoelectric power, electrical resistivity, I-V characteristics, relative electrical permittivity, dc magnetization and ac magnetic susceptibility measurements carried out on Cu₅SbO₆ showed p-type semiconducting behaviour with the activation energy of 0.24 eV as well as ferrimagnetic order with the Néel temperature of 5.2 K. The effective magnetic moment of 5.857 μ_B/f.u. revealed the orbital contribution to the magnetic moment. Large value of the relative electrical permittivity indicated that the Cu²⁺ ions with the unscreened and unfilled electron shells are responsible for the polarizability and forming of electric dipoles.

DOI: 10.12693/APhysPolA.122.1105
PACS numbers: 75.50.Pp, 72.20.Pa, 75.50.Gg