Stability of Diodes with Poly(3-hexyl-thio-phene) and Polyazomethines Thin Organic Layer

H. Bednarskia, J. Gąsiorowskib, M. Domańskia, B. Hajduka, J. Jurusika, B. Jarząbeka and J. Weszkaa aCentre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Skłodowskiej 34, 41-819 Zabrze, Poland bLinz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Altenberger Str. 69, Linz 4040, Austria

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Herein we report results of studies on stability of diodes based on organic semiconductors such as poly (3-hexyl-thio-phene) (P3HT) and soluble derivative of polyazomethine poly(1,4-(2,5-bi-soctyloxy phenylene-methylidyne-nitrilo)-1,4-phenylene-nitrilo-methylidyne), (BOO-PPI). Both polymers were deposited on glass/ITO substrate with or without covering with blocking layer: poly(3,4-ethylene-dioxy-thio-phene):poly(4-styrene sulfonate) (PEDOT:PSS) and finished with Al back electrode. Prepared devices were studied by monitoring their electrical conductivity under nitrogen atmosphere and ambient air conditions. Under nitrogen atmosphere a marked influence of presence of the blocking layer on the diodes electrical conductivity was revealed. The P3HT diodes prepared without PEDOT:PSS thin film shown quick degradation, whereas presence of these layers stabilizes electrical conductivity in these devices. Inversely, the PPI based diodes without the PEDOT:PSS revealed stable conducting properties, while corresponding diodes with PEDOT:PSS layer showed degradation traces of their conducting properties.

DOI: 10.12693/APhysPolA.122.1083 PACS numbers: 73.40.Ei, 73.50.Pz