THz Double-Grating Gate Transistor Detectors in High Magnetic Fields |
| D. But, N. Dyakonova, D. Coquillat, F. Teppe, W. Knap
Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France |
| T. Watanabe, Y. Tanimoto, S. Boubanga Tombet and T. Otsuji
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan |
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| Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel. |
| DOI: 10.12693/APhysPolA.122.1080 PACS numbers: 07.57.Kp, 85.30.Tv, 73.43.Qt |