ACTA

Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO

V. Khomyak^a, M. Slyotov^a, I. Shtepliuk^b, O. Slyotov^a, and V. Kosolovskiy^a
^aYu. Fedkovich Chernivtsi National University, 58012, Chernivtsi, Ukraine
^bFrantsevich Institute for Problems of Materials Science, NASU, 03680, Kiev-142, Ukraine

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Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (ħω > E_g).

DOI: 10.12693/APhysPolA.122.1039
PACS numbers: 78.55.Et, 78.67.Bf, 81.05.Dz, 81.07.Bc