XPS and Raman Characterizations of Zn1-xCdxO Films Grown at the Different Growth Conditions
I. Shtepliuka, O. Khyzhun a, G. Lashkarev a, V. Khomyak b and V. Lazorenko a
aI. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev, Ukraine
bChernivtsi National University, 58012, Chernivtsi, Ukraine
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X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the Zn1 - xCdxO semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the Zn1 - xCdxO films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/O2 gas ratio and dc power.
DOI: 10.12693/APhysPolA.122.1034
PACS numbers: 78.55.Et, 78.67.Bf