ACTA

XPS and Raman Characterizations of Zn_1-xCd_xO Films Grown at the Different Growth Conditions

I. Shtepliuk^a, O. Khyzhun^a, G. Lashkarev^a, V. Khomyak^b and V. Lazorenko^a
^aI. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev, Ukraine
^bChernivtsi National University, 58012, Chernivtsi, Ukraine

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X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the Zn_{1 - x}Cd_xO semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the Zn_{1 - x}Cd_xO films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/O₂ gas ratio and dc power.

DOI: 10.12693/APhysPolA.122.1034
PACS numbers: 78.55.Et, 78.67.Bf