Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells
M. Baranowski, R. Kudrawiec, M. Latkowska, M. Syperek and J. Misiewicz
Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Full Text PDF
Model of hopping excitons is applied to study the carrier dynamics in GaInNAs/GaAs quantum well system. Impact of parameters describing localizing states (i.e., an average energy and density) on carrier dynamics in GaInNAs material is investigated theoretically. It is shown how those parameters affect the quantities that can be extracted from time resolved photoluminescence experiments. It is shown that obtained simulations can be very helpful in the interpretation of the experimental data.
DOI: 10.12693/APhysPolA.122.1022
PACS numbers: 78.55.Cr, 78.20.Bh, 78.55.Qr