Tuning Optical Absorption Edge by Composition and Temperature in TlGaS2xSe2(1 - x) Layered Mixed Crystals (0 ≤ x ≤ 1) |
| N.M. Gasanly
Physics Department, Middle East Technical University, 06800 Ankara, Turkey |
| Received: November 10, 2011; in final form July 31, 2012 |
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| Optical properties of TlGaS2xSe2(1-x) mixed crystals (0 ≤ x ≤1) have been studied using the transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined through the analysis of the absorption data. It was found that the energy band gaps increase with increase of sulfur atoms content in TlGaS2xSe2(1 - x) mixed crystals. From the transmission measurements carried out in the temperature range of 10-300 K, the rates of change of the indirect band gaps with temperature were established for the different compositions of mixed crystals studied. |
| DOI: 10.12693/APhysPolA.122.728 PACS numbers: 78.20.Ci, 78.40.-q, 78.40.Fy |