Analysis of Electron Mobility in Some "Problematic Materials" from Magnetoresistance Effect at High Magnetic Fields
V.V. Shchennikova, A.E. Kar'kina, S.V. Ovsyannikovb, c and N.V. Morozovaa
aInstitute of Metal Physics of Russian Academy of Sciences, Urals Division, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia
bBayerisches Geoinstitut, Universität Bayreuth, Universitätsstr. 30, Bayreuth D-95447, Germany
cInstitute for Solid State Chemistry of Russian Academy of Sciences, Urals Division, 91 Pervomayskaya Str., Yekaterinburg 620049, Russia
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Using examples of some perspective electronic materials (HgSeS, Fe3O4, InN, and others) it is shown that magnetoresistance data at high magnetic fields allow evaluating the true values of mobility of charge carriers in spite of any "adverse factors". Additional impacts involving high pressure and irradiation with high-energy particles (neutrons, electrons, ions) produce the enhancement of magnetoresistance technique of testing and allow to go into details of the type of electron structure and scattering mechanisms of charge carriers.
DOI: 10.12693/APhysPolA.122.544
PACS numbers: 72.20.My, 62.50.-p, 61.80.-x, 72.20.Jv